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? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? high-current, high-side gate drive ic FAN73711 ? rev. 1.0.0 june 2009 FAN73711 high-current, high-side gate drive ic features ? floating channel for bootstrap operation to +600v ? 4a/4a sourcing/sinking current driving capability ? common-mode dv/dt noise canceling circuit ? 3.3v and 5v input logic compatible ? output in-phase with input signal ? under-voltage lockout for v bs ? built-in shunt regulator on v dd and v bs ? 8-lead small outline package (sop) applications ? high-speed gate driver ? sustain switch driver in pdp application ? energy recovery circuit switch driver in pdp application ? high-power buck converter ? motor drive inverter description the FAN73711 is a monolithic high-side gate drive ic that can drive high-speed mosfets and igbts operat- ing up to +600v. it has a buffered output stage with all nmos transistors designed for high pulse current driving capability and minimum cross-conduction. fairchild?s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circum- stances. an advanced level-shift circuit offers high-side gate driver operation up to v s =-9.8v (typical) for v bs =15v. the uvlo circuit prevents malfunction when v bs is lower than the specified threshold voltage. the high-current and low-output voltage drop feature makes this device suitable for sustain and energy- recovery circuit switches driver in the plasma display panel application, motor drive inverter, switching power supply, and high-power dc-dc converter applications. ordering information for fairchild?s definition of eco status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html . 8-sop part number operating temperature range package eco status packing method FAN73711m 40c ~ 125c 8-sop rohs tube FAN73711mx tape and reel
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 2 typical application diagrams figure 1. floated bi-directional switch and half-bridge driver: pdp application figure 2. step-down (buck) dc-dc converter application energy recovery system sustain drive part d boot1 d2 c2 in1 to panel d boot2 c boot1 q1 d1 d3 d4 l1 in2 15v q2 r boot1 c boot2 vs d boot3 in3 q3 r boot3 c boot3 15v in4 q4 r1 r2 r5 r6 c1 c3 r8 r7 r4 r3 FAN73711 v b in gnd ho v s nc 1 2 nc v dd 7 5 6 8 3 4 FAN73711 v b in gnd ho v s nc 1 2 nc v dd 7 5 6 8 3 4 FAN73711 v b in gnd ho v s nc 1 2 nc v dd 7 5 6 8 3 4 FAN73711 v b in gnd ho v s nc 1 2 nc v dd 7 5 6 8 3 4 FAN73711 rev.01 d boot c2 pwm c boot c1 d1 l1 15v r boot r2 FAN73711 v b in gnd ho v s nc nc v dd 7 5 6 8 2 4 3 1 r1 v in v out FAN73711 rev.01
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 3 internal block diagram figure 3. functional block diagram pin configuration figure 4. pin configuration (top view) pin definitions pin # name description 1v dd supply voltage 2 in logic input for high-side gate driver output 3 nc no connection 4 gnd ground 5 nc no connection 6v s high-voltage floating supply return 7 ho high-side driver output 8v b high-side floating supply uvlo pulse generator v dd gnd in v b ho v s r r s q 6 7 8 1 4 2 noise canceller pin 3 and 5 are no connection. FAN73711 rev.01 110k v dd shoot-through current compensated gate driver v s v b FAN73711 v dd nc in ho nc 4 gnd 3 2 1 5 6 7 8 FAN73711 rev.01
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 4 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. t a =25c unless otherwise specified. notes: 1. this ic contains a shunt regulator on v dd and v bs . this supply pin should not be driven by a low-impedance voltage source greater than the v shunt specified in the electrical characteristics section. 2. mounted on 76.2 x 114.3 x 1.6mm pcb (fr-4 glass epoxy material). 3. refer to the following standards: jesd51-2: integral circuits thermal test method environmental conditions, natural convection, and jesd51-3: low effective thermal conductivity test board for leaded surface-mount packages. 4. do not exceed power dissipation (p d ) under any circumstances. recommended operating conditions the recommended operating conditions table defines the conditions for actual device operation. recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. fairchild does not recommend exceeding them or designing to absolute maximum ratings. symbol characteristics min. max. unit v s high-side floating offset voltage (1) v b -v shunt v b +0.3 v v b high-side floating supply voltage -0.3 625.0 v v ho high-side floating output voltage v s -0.3 v b +0.3 v v dd low-side and logic supply voltage (1) -0.3 v shunt v v in logic input voltage -0.3 v dd +0.3 v dv s /dt allowable offset voltage slew rate 50 v/ns p d power dissipation (2, 3, 4) 0.625 w ja thermal resistance 200 c/w t j junction temperature -55 +150 c t stg storage temperature -55 +150 c symbol parameter min. max. unit v b high-side floating supply voltage v s +10 v s +20 v v s high-side floating supply offset voltage 6-v dd 600 v v ho high-side output voltage v s v b v v in logic input voltage gnd v dd v v dd supply voltage 10 20 v t a operating ambient temperature -40 +125 c
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 5 electrical characteristics v bias (v dd , v bs )=15.0v, t a = 25c, unless otherwise specified. the v in and i in parameters are referenced to gnd. the v o and i o parameters are relative to v s and are applicable to the respective output ho. note: 5. these parameters guaranteed by design. dynamic electrical characteristics v dd =v bs =15v, gnd=0v, c load =1000pf, t a =25c, unless otherwise specified. symbol characteristics test condition min. typ. max. unit power supply section i qdd quiescent v dd supply current v in =0v or 5v 25 70 a i pdd operating v dd supply current f in =20khz, no load 35 100 a bootstrapped supply section v bsuv+ v bs supply under-voltage positive-going threshold voltage v bs =sweep 8.0 9.0 10.0 v v bsuv- v bs supply under-voltage negative-going threshold voltage v bs =sweep 7.3 8.3 9.3 v v bshys v bs supply under-voltage lockout hysteresis voltage v bs =sweep 0.7 v i lk offset supply leakage current v b =v s =625v 10 a i qbs quiescent v bs supply current v in =0v or 5v 60 120 a i pbs operating v bs supply current c load =1000pf, f in =20khz, rms value 470 800 a shung regulator section v shunt v dd and v bs shunt regulator clamping voltage v dd =sweep or v bs =sweep i shunt =5ma 21 23 25 v input logic section v ih logic ?1? input voltage 2.5 v v il logic ?0? input voltage 0.8 v i in+ logic input high bias current v in =5v 40 65 a i in- logic input low bias current v in =0v 2 a r in input pull-down resistance 90 110 k gate driver output section v oh high level output voltage (v bias - v o ) no load 1.2 v v ol low level output voltage no load 30 mv i o+ output high, short-circuit pulsed current (5) v ho =0v, v in =5v, pw 10s 34 a i o- output low, short-circuit pulsed current (5) v ho =15v,v in =0v, pw 10s 34 a v s allowable negative v s pin voltage for in signal propagation to ho -9.8 -7.0 v symbol parameter conditions min. typ. max. unit t on turn-on propagation delay time v s =0v 150 210 ns t off turn-off propagation delay time v s =0v 150 210 ns t r turn-on rise time 25 50 ns t f turn-off fall time 15 40 ns
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 6 typical characteristics figure 5. turn-on propagation delay vs. temperature figure 6. turn-off propagation delay vs. temperature figure 7. turn-on rise time vs. temperature figure 8. turn-off fall time vs. temperature figure 9. quiescent v dd supply current vs. temperature figure 10. quiescent v bs supply current vs. temperature -40 -20 0 20 40 60 80 100 120 100 120 140 160 180 200 t on [ns] temperature [c] -40 -20 0 20 40 60 80 100 120 100 120 140 160 180 200 t off [ns] temperature [c] -40-20 0 20406080100120 0 10 20 30 40 50 t r [ns] temperature [c] -40-20 0 20406080100120 0 10 20 30 40 50 t f [ns] temperature [c] -40-20 0 20406080100120 0 25 50 75 100 i qdd [ a ] temperature [c] -40-20 0 20406080100120 0 25 50 75 100 i qdd [ a ] temperature [c]
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 7 typical characteristics (continued) figure 11. operating v dd supply current vs. temperature figure 12. operating v bs supply current vs. temperature figure 13. v bs uvlo+ vs. temperature figure 14. v bs uvlo- vs. temperature figure 15. high-level output voltage vs. temperature figure 16. low-level output voltage vs. temperature -40-20 0 20406080100120 0 20 40 60 80 100 i pdd [ a ] temperature [c] -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 i pbs [ a ] temperature [c] -40-20 0 20406080100120 8.0 8.5 9.0 9.5 10.0 v bsuv+ [v] temperature [c] -40-20 0 20406080100120 7.0 7.5 8.0 8.5 9.0 9.5 v bsuv- [v] temperature [c] -40-20 0 20406080100120 0.0 0.3 0.6 0.9 1.2 v oh [v] temperature [c] -40-20 0 20406080100120 0 5 10 15 20 25 30 v ol [mv] temperature [c]
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 8 typical characteristics (continued) figure 17. logic high input voltage vs. temperature figure 18. logic low input voltage vs. temperature figure 19. logic input high bias current vs. temperature figure 20. allowable negative v s voltage vs. temperature figure 21. shunt regulator clamping voltage vs. temperature -40-20 0 20406080100120 0.5 1.0 1.5 2.0 2.5 v ih [v] temperature [c] -40-20 0 20406080100120 0.5 1.0 1.5 2.0 2.5 v il [v] temperature [c] -40 -20 0 20 40 60 80 100 120 0 10 20 30 40 50 60 i in+ [ a ] temperature [c] -40 -20 0 20 40 60 80 100 120 -12 -11 -10 -9 -8 -7 v s [v] temperature [c] -40-20 0 20406080100120 21 22 23 24 25 v shunt [v] temperature [c]
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 9 switching time definitions timing diagram figure 22. switching time test circuit and waveform definitions 0.1f v b 15v ho 10f 1000pf in out 50% 90% 50% t on 10% t r t off t f 10% 90% FAN73711 10nf 15v 10f v dd v s gnd in FAN73711 rev.01
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 10 package dimensions figure 23. 8-lead small outline package (sop) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semic onductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packagi ng area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . 8 0 see detail a notes: unless otherwise specified a) this pack age conforms to jedec ms-012, variation aa, issue c, b) all dimensions are in millimeters. c) dimensions do not include mold flash or burrs. d) landpattern stan dard: soic127p600x175-8m. e) drawing filename: m08arev13 land pattern recommendation seating plane 0.10 c c gage plane x 45 detail a scale: 2:1 pin one indicator 4 8 1 c m ba 0.25 b 5 a 5.60 0.65 1.75 1.27 6.20 5.80 3.81 4.00 3.80 5.00 4.80 (0.33) 1.27 0.51 0.33 0.25 0.10 1.75 max 0.25 0.19 0.36 0.50 0.25 r0.10 r0.10 0.90 0.406 (1.04) option a - bevel edge option b - no bevel edge
FAN73711 ? high-current, high-side gate drive ic ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FAN73711 ? rev. 1.0.0 11

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